All MOSFET. SSM3J327F Datasheet

 

SSM3J327F Datasheet and Replacement


   Type Designator: SSM3J327F
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 44 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: SOT346 SC59 SMINI
 

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SSM3J327F Datasheet (PDF)

 0.1. Size:185K  toshiba
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SSM3J327F

 6.1. Size:206K  toshiba
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SSM3J327F

 6.2. Size:910K  cn vbsemi
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SSM3J327F

SSM3J327Rwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIO

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Datasheet: SSM3J307T , SSM3J312T , SSM3J313T , SSM3J314T , SSM3J317T , SSM3J321T , SSM3J325F , SSM3J326T , 5N65 , SSM3J327R , SSM3J328R , SSM3J332R , SSM3J334R , SSM3J35CT , SSM3J35FS , SSM3J35MFV , SSM3J36FS .

History: TPC8406-H | DMT6004LPS | MTP9435BDYAQ8 | UTT6NP10G-S08-R | SIA537EDJ | P1603BEBA | QM2N7002E3K1

Keywords - SSM3J327F MOSFET datasheet

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