SSM3J327F Specs and Replacement
Type Designator: SSM3J327F
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 44 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
SSM3J327F substitution
- MOSFET ⓘ Cross-Reference Search
SSM3J327F datasheet
ssm3j327r.pdf
SSM3J327R www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIO... See More ⇒
Detailed specifications: SSM3J307T, SSM3J312T, SSM3J313T, SSM3J314T, SSM3J317T, SSM3J321T, SSM3J325F, SSM3J326T, 2SK3568, SSM3J327R, SSM3J328R, SSM3J332R, SSM3J334R, SSM3J35CT, SSM3J35FS, SSM3J35MFV, SSM3J36FS
Keywords - SSM3J327F MOSFET specs
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