SSM6J214FE Specs and Replacement

Type Designator: SSM6J214FE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT563 ES6

SSM6J214FE substitution

- MOSFET ⓘ Cross-Reference Search

 

SSM6J214FE datasheet

 ..1. Size:207K  toshiba
 ssm6j214fe.pdf pdf_icon

SSM6J214FE

SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J214FE Power Management Switch Applications Unit mm 1.8 V drive Low ON-resistance RDS(ON) = 149.6 m (max) (@VGS = -1.8 V) RDS(ON) = 77.6 m (max) (@VGS = -2.5 V) RDS(ON) = 57.0 m (max) (@VGS = -4.5 V) RDS(ON) = 50.0 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta... See More ⇒

 7.1. Size:202K  toshiba
 ssm6j213fe.pdf pdf_icon

SSM6J214FE

SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS ) SSM6J213FE Power Management Switch Applications Unit mm 1.5-V drive Low ON-resistance RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25... See More ⇒

 7.2. Size:226K  toshiba
 ssm6j215fe.pdf pdf_icon

SSM6J214FE

SSM6J215FE MOSFETs Silicon P-Channel MOS (U-MOS ) SSM6J215FE SSM6J215FE SSM6J215FE SSM6J215FE 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches 2. Features 2. Features 2. Features 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 154 m (max) (@VGS = -1.5 V) RDS(ON) = 104 m (max) (@VGS =... See More ⇒

 7.3. Size:157K  toshiba
 ssm6j21tu.pdf pdf_icon

SSM6J214FE

SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS ) SSM6J21TU High Current Switching Applications Unit mm Suitable for high-density mounting due to compact package Low on resistance Ron = 88 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS 12... See More ⇒

SHOW MORE

Detailed specifications: SSM6J06FU, SSM6J07FU, SSM6J08FU, SSM6J205FE, SSM6J206FE, SSM6J207FE, SSM6J212FE, SSM6J213FE, IRF1407, SSM6J21TU, SSM6J23FE, SSM6J25FE, SSM6J26FE, SSM6J401TU, SSM6J402TU, SSM6J409TU, SSM6J410TU

Keywords - SSM6J214FE MOSFET specs

 SSM6J214FE cross reference

 SSM6J214FE equivalent finder

 SSM6J214FE pdf lookup

 SSM6J214FE substitution

 SSM6J214FE replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs