SSM6J23FE
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM6J23FE
Marking Code: KE
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1
V
|Id|ⓘ - Maximum Drain Current: 1.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 93
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16
Ohm
Package:
SOT563
ES6
SSM6J23FE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM6J23FE
Datasheet (PDF)
..1. Size:250K toshiba
ssm6j23fe.pdf 
SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J23FE High Current Switching Applications Unit: mmDC-DC Converter Suitable for high-density mounting due to compact package Low on-resistance: Ron = 160 m (max) (@VGS = -4.0 V) Ron = 210 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDra
8.1. Size:305K toshiba
ssm6j206fe.pdf
SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE Power Management Switch Applications Unit: mm High-Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 320 m (max) (@VGS = -1.8 V) Ron = 186 m (max) (@VGS = -2.5 V) R = 130 m (max) (@V = -4.0 V) on GS Lead (Pb) free Maximum Ratings (Ta = 25C) Cha
8.2. Size:152K toshiba
ssm6j25fe.pdf
SSM6J25FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J25FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 260m (max) (@VGS = -4 V) 1.20.05Ron = 430m (max) (@VGS = -2.5 V) 1 65Maximum Ratings (Ta = 25C) 243Characteristics Symbol Rating Uni
8.3. Size:202K toshiba
ssm6j213fe.pdf
SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J213FE Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25
8.4. Size:218K toshiba
ssm6j205fe.pdf
SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive P-ch 2-in-1 Low ON-resistance: Ron = 460 m (max) (@VGS = -1.8 V) Ron = 306 m (max) (@VGS = -2.5 V) Ron = 234 m (max) (@VGS = -4.0 V) Maximum Ratings (Ta = 25C) Characteristic Sym
8.5. Size:226K toshiba
ssm6j215fe.pdf
SSM6J215FEMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J215FESSM6J215FESSM6J215FESSM6J215FE1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 154 m (max) (@VGS = -1.5 V) RDS(ON) = 104 m (max) (@VGS =
8.6. Size:157K toshiba
ssm6j21tu.pdf
SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J21TU High Current Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on resistance: Ron = 88 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12
8.7. Size:215K toshiba
ssm6j216fe.pdf
SSM6J216FEMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J216FESSM6J216FESSM6J216FESSM6J216FE1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 88.1 m (max) (@VGS = -1.5 V) RDS(ON) = 56.0 m (max) (@VGS
8.8. Size:154K toshiba
ssm6j26fe.pdf
SSM6J26FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J26FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 230m (max) (@VGS = -4 V) 1.20.05Ron = 330m (max) (@VGS = -2.5 V) Ron = 980m (max) (@VGS = -1.8 V) 1 65Maximum Ratings (Ta = 25C) 24
8.9. Size:207K toshiba
ssm6j214fe.pdf
SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J214FE Power Management Switch Applications Unit: mm 1.8 V drive Low ON-resistance: RDS(ON) = 149.6 m (max) (@VGS = -1.8 V) RDS(ON) = 77.6 m (max) (@VGS = -2.5 V) RDS(ON) = 57.0 m (max) (@VGS = -4.5 V) RDS(ON) = 50.0 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta
8.10. Size:190K toshiba
ssm6j212fe.pdf
SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J212FE Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 94.0 m (max) (@VGS = -1.5 V) RDS(ON) = 65.4 m (max) (@VGS = -1.8 V) RDS(ON) = 49.0 m (max) (@VGS = -2.5 V) RDS(ON) = 40.7 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta
8.11. Size:312K toshiba
ssm6j207fe.pdf
SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE High-Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 491 m (max) (@VGS = -4 V) Ron = 251 m (max) (@VGS = -10 V) Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS -30 VGatesource voltage VGSS 20 VDC ID -1.4
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