SSM6J23FE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSM6J23FE
Маркировка: KE
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.2 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 93 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
Тип корпуса: SOT563 ES6
SSM6J23FE Datasheet (PDF)
ssm6j23fe.pdf
SSM6J23FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J23FE High Current Switching Applications Unit: mmDC-DC Converter Suitable for high-density mounting due to compact package Low on-resistance: Ron = 160 m (max) (@VGS = -4.0 V) Ron = 210 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDra
ssm6j206fe.pdf
SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE Power Management Switch Applications Unit: mm High-Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 320 m (max) (@VGS = -1.8 V) Ron = 186 m (max) (@VGS = -2.5 V) R = 130 m (max) (@V = -4.0 V) on GS Lead (Pb) free Maximum Ratings (Ta = 25C) Cha
ssm6j25fe.pdf
SSM6J25FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J25FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 260m (max) (@VGS = -4 V) 1.20.05Ron = 430m (max) (@VGS = -2.5 V) 1 65Maximum Ratings (Ta = 25C) 243Characteristics Symbol Rating Uni
ssm6j213fe.pdf
SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J213FE Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 250 m (max) (@VGS = -1.5 V) RDS(ON) = 178 m (max) (@VGS = -1.8 V) RDS(ON) = 133 m (max) (@VGS = -2.5 V) RDS(ON) = 103 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25
ssm6j205fe.pdf
SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications Unit: mm 1.8V drive P-ch 2-in-1 Low ON-resistance: Ron = 460 m (max) (@VGS = -1.8 V) Ron = 306 m (max) (@VGS = -2.5 V) Ron = 234 m (max) (@VGS = -4.0 V) Maximum Ratings (Ta = 25C) Characteristic Sym
ssm6j215fe.pdf
SSM6J215FEMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J215FESSM6J215FESSM6J215FESSM6J215FE1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 154 m (max) (@VGS = -1.5 V) RDS(ON) = 104 m (max) (@VGS =
ssm6j21tu.pdf
SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS) SSM6J21TU High Current Switching Applications Unit: mm Suitable for high-density mounting due to compact package Low on resistance: Ron = 88 m (max) (@VGS = -2.5 V) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-Source voltage VDS -12 VGate-Source voltage VGSS 12
ssm6j216fe.pdf
SSM6J216FEMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J216FESSM6J216FESSM6J216FESSM6J216FE1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 88.1 m (max) (@VGS = -1.5 V) RDS(ON) = 56.0 m (max) (@VGS
ssm6j26fe.pdf
SSM6J26FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) SSM6J26FE High Speed Switching Applications Unit: mm1.60.05 Optimum for high-density mounting in small packages Low on-resistance: Ron = 230m (max) (@VGS = -4 V) 1.20.05Ron = 330m (max) (@VGS = -2.5 V) Ron = 980m (max) (@VGS = -1.8 V) 1 65Maximum Ratings (Ta = 25C) 24
ssm6j214fe.pdf
SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J214FE Power Management Switch Applications Unit: mm 1.8 V drive Low ON-resistance: RDS(ON) = 149.6 m (max) (@VGS = -1.8 V) RDS(ON) = 77.6 m (max) (@VGS = -2.5 V) RDS(ON) = 57.0 m (max) (@VGS = -4.5 V) RDS(ON) = 50.0 m (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta
ssm6j212fe.pdf
SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J212FE Power Management Switch Applications Unit: mm 1.5-V drive Low ON-resistance: RDS(ON) = 94.0 m (max) (@VGS = -1.5 V) RDS(ON) = 65.4 m (max) (@VGS = -1.8 V) RDS(ON) = 49.0 m (max) (@VGS = -2.5 V) RDS(ON) = 40.7 m (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta
ssm6j207fe.pdf
SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE High-Speed Switching Applications Unit: mm 4 V drive Low ON-resistance: Ron = 491 m (max) (@VGS = -4 V) Ron = 251 m (max) (@VGS = -10 V) Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrainsource voltage VDS -30 VGatesource voltage VGSS 20 VDC ID -1.4
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 10N60L-TF3T-T
History: 10N60L-TF3T-T
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918