SSM6J409TU
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM6J409TU
Marking Code: K11
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 9.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
Cossⓘ -
Output Capacitance: 240
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0221
Ohm
Package: UF6
SSM6J409TU
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM6J409TU
Datasheet (PDF)
..1. Size:221K toshiba
ssm6j409tu.pdf 
SSM6J409TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM6J409TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.5V drive Low ON-resistance: Ron = 72.3m (max) (@VGS = -1.5 V) Ron = 46.2m (max) (@VGS = -1.8 V) Ron = 30.2m (max) (@VGS = -2.5 V) Ron = 22.1m (max) (@VGS = -4.5 V) Absolut
7.1. Size:197K toshiba
ssm6j402tu.pdf
SSM6J402TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J402TU DC/DC Converter Application High-Speed Switching Applications unit: mm2.10.1 4.0 V drive 1.70.1 Low ON-resistance : RDS(ON) = 225m max (@VGS = -4 V) : RDS(ON) = 117m max (@VGS = -10 V) 1 62 5Absolute Maximum Ratings (Ta = 25C) 3 4Characteristic Symbol Rating
7.2. Size:197K toshiba
ssm6j401tu.pdf
SSM6J401TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J401TU DC/DC Converter Application High-Speed Switching Applications unit: mm2.10.1 4.0V drive 1.70.1 Low ON-resistance : RDS(ON) = 145m (max) (@VGS = -4 V) : RDS(ON) = 73m (max) (@VGS = -10 V) 1 62 5Absolute Maximum Ratings (Ta = 25C) 3 4Characteristic Symbol Rating
8.1. Size:217K toshiba
ssm6j410tu.pdf
SSM6J410TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J410TU Power Management Switch Applications Unit: mm High-Speed Switching Applications 4-V drive Low ON-resistance RDS(ON) = 393m (max) (@VGS = 4 V) RDS(ON) = 216m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-Sou
8.2. Size:205K toshiba
ssm6j412tu.pdf
SSM6J412TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J412TU Power Management Switch Applications Unit: mm2.10.1 1.5-V drive1.70.1 Low ON-resistance: RDS(ON) = 99.6 m (max) (@VGS = -1.5 V) RDS(ON) = 67.8 m (max) (@VGS = -1.8 V) RDS(ON) = 51.4 m (max) (@VGS = -2.5 V) 1 6RDS(ON) = 42.7 m (max) (@VGS = -4.5 V) 5 2A
8.3. Size:215K toshiba
ssm6j414tu.pdf
SSM6J414TUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J414TUSSM6J414TUSSM6J414TUSSM6J414TU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 54 m (max) (@VGS = -1.5 V) RDS(ON) = 36 m (max) (@VGS = -
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