SSM6J409TU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSM6J409TU
Маркировка: K11
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 9.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 15 nC
Выходная емкость (Cd): 240 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0221 Ohm
Тип корпуса: UF6
Аналог (замена) для SSM6J409TU
SSM6J409TU Datasheet (PDF)
ssm6j409tu.pdf
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SSM6J409TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) SSM6J409TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.5V drive Low ON-resistance: Ron = 72.3m (max) (@VGS = -1.5 V) Ron = 46.2m (max) (@VGS = -1.8 V) Ron = 30.2m (max) (@VGS = -2.5 V) Ron = 22.1m (max) (@VGS = -4.5 V) Absolut
ssm6j402tu.pdf
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SSM6J402TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J402TU DC/DC Converter Application High-Speed Switching Applications unit: mm2.10.1 4.0 V drive 1.70.1 Low ON-resistance : RDS(ON) = 225m max (@VGS = -4 V) : RDS(ON) = 117m max (@VGS = -10 V) 1 62 5Absolute Maximum Ratings (Ta = 25C) 3 4Characteristic Symbol Rating
ssm6j401tu.pdf
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SSM6J401TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J401TU DC/DC Converter Application High-Speed Switching Applications unit: mm2.10.1 4.0V drive 1.70.1 Low ON-resistance : RDS(ON) = 145m (max) (@VGS = -4 V) : RDS(ON) = 73m (max) (@VGS = -10 V) 1 62 5Absolute Maximum Ratings (Ta = 25C) 3 4Characteristic Symbol Rating
ssm6j410tu.pdf
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SSM6J410TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J410TU Power Management Switch Applications Unit: mm High-Speed Switching Applications 4-V drive Low ON-resistance RDS(ON) = 393m (max) (@VGS = 4 V) RDS(ON) = 216m (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitDrain-Sou
ssm6j412tu.pdf
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SSM6J412TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM6J412TU Power Management Switch Applications Unit: mm2.10.1 1.5-V drive1.70.1 Low ON-resistance: RDS(ON) = 99.6 m (max) (@VGS = -1.5 V) RDS(ON) = 67.8 m (max) (@VGS = -1.8 V) RDS(ON) = 51.4 m (max) (@VGS = -2.5 V) 1 6RDS(ON) = 42.7 m (max) (@VGS = -4.5 V) 5 2A
ssm6j414tu.pdf
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SSM6J414TUMOSFETs Silicon P-Channel MOS (U-MOS)SSM6J414TUSSM6J414TUSSM6J414TUSSM6J414TU1. Applications1. Applications1. Applications1. Applications Power Management Switches2. Features2. Features2. Features2. Features(1) 1.5-V gate drive voltage.(2) Low drain-source on-resistance: RDS(ON) = 54 m (max) (@VGS = -1.5 V) RDS(ON) = 36 m (max) (@VGS = -
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBK8238
History: VBK8238
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Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C