SSM6N17FU
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM6N17FU
Marking Code: DM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 7
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 7
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 20
Ohm
Package:
SOT363
SC88
US6
SSM6N17FU
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM6N17FU
Datasheet (PDF)
..1. Size:117K toshiba
ssm6n17fu.pdf 
SSM6N17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N17FU High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package High drain-source voltage High speed switching Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltag
8.1. Size:153K toshiba
ssm6n15fu.pdf
SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Unit: mmAnalog Switching Applications Small package Low ON resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage V
8.2. Size:133K toshiba
ssm6n16fu.pdf
SSM6N16FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FU High Speed Switching Applications Unit: mmAnalog Switch Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25C)
8.3. Size:184K toshiba
ssm6n15fe.pdf
SSM6N15FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE High Speed Switching Applications Unit: mmAnalog Switching Applications Small package Low ON resistance : Ron = 4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage V
8.4. Size:166K toshiba
ssm6n15afe.pdf
SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications Unit: mm1.60.05 2.5 V drive N-ch 2-in-11.20.05 Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) 1 6Absolute Maximum Ratings (Ta = 25C) 25(Q1, Q2 Common) 3 4Characteristics Symbol
8.5. Size:190K toshiba
ssm6n15afu.pdf
SSM6N15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFU Load Switching Applications Unit: mm 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 (max) (@VGS = 4.0 V) RDS(ON) = 6.0 (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating UnitDrain-Source voltage VDSS
8.6. Size:132K toshiba
ssm6n16fe.pdf
SSM6N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FE High Speed Switching Applications Unit: mmAnalog Switching Applications Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 (max) (@VGS = 4 V) : Ron = 4.0 (max) (@VGS = 2.5 V) : Ron = 15 (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25
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