All MOSFET. TJ150F06M3L Datasheet

 

TJ150F06M3L Datasheet and Replacement


   Type Designator: TJ150F06M3L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 1750 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: TO220SM
 

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TJ150F06M3L Datasheet (PDF)

 ..1. Size:284K  toshiba
 tj150f06m3l.pdf pdf_icon

TJ150F06M3L

TJ150F06M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ150F06M3LTJ150F06M3LTJ150F06M3LTJ150F06M3L1. Applications1. Applications1. Applications1. Applications Automotive Relay Drivers Motor Drivers2. Features2. Features2. Features2. Features(1) AEC-Q101 qualified(2) Low drain-source on-resistance: RDS(ON) = 4.3 m (typ.) (VGS = -10 V)(3) Low leakage

 7.1. Size:275K  toshiba
 tj150f04m3l.pdf pdf_icon

TJ150F06M3L

TJ150F04M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ150F04M3LTJ150F04M3LTJ150F04M3LTJ150F04M3L1. Applications1. Applications1. Applications1. Applications Automotive Relay Drivers DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.2 m (typ.) (VGS = -10 V)(2) Low leakage c

Datasheet: SSM6P39TU , SSM6P40TU , SSM6P41FE , SSM6P47NU , SSM6P49NU , SSM6P54TU , TJ10S04M3L , TJ11A10M3 , SKD502T , TJ15P04M3 , TJ15S06M3L , TJ20A10M3 , TJ20S04M3L , TJ30S06M3L , TJ40S04M3L , TJ50S06M3L , TJ60S04M3L .

Keywords - TJ150F06M3L MOSFET datasheet

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