TJ20S04M3L Specs and Replacement

Type Designator: TJ20S04M3L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0222 Ohm

Package: DPAK

TJ20S04M3L substitution

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TJ20S04M3L datasheet

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TJ20S04M3L

TJ20S04M3L MOSFETs Silicon P-Channel MOS (U-MOS ) TJ20S04M3L TJ20S04M3L TJ20S04M3L TJ20S04M3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 17 m (typ.) (VGS = -10 V) (2) Low leakage current ... See More ⇒

Detailed specifications: SSM6P49NU, SSM6P54TU, TJ10S04M3L, TJ11A10M3, TJ150F06M3L, TJ15P04M3, TJ15S06M3L, TJ20A10M3, 20N50, TJ30S06M3L, TJ40S04M3L, TJ50S06M3L, TJ60S04M3L, TJ60S06M3L, TJ70A06J3, TJ80S04M3L, TJ8S06M3L

Keywords - TJ20S04M3L MOSFET specs

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