All MOSFET. TJ30S06M3L Datasheet

 

TJ30S06M3L Datasheet and Replacement


   Type Designator: TJ30S06M3L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0218 Ohm
   Package: DPAK
 

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TJ30S06M3L Datasheet (PDF)

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TJ30S06M3L

TJ30S06M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ30S06M3LTJ30S06M3LTJ30S06M3LTJ30S06M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 16.8 m (typ.) (VGS = -10 V)(2) Low leakage curren

Datasheet: SSM6P54TU , TJ10S04M3L , TJ11A10M3 , TJ150F06M3L , TJ15P04M3 , TJ15S06M3L , TJ20A10M3 , TJ20S04M3L , CS150N03A8 , TJ40S04M3L , TJ50S06M3L , TJ60S04M3L , TJ60S06M3L , TJ70A06J3 , TJ80S04M3L , TJ8S06M3L , TK100F04K3 .

History: IPB65R380C6 | NVD4806N | FHP100N03A | NCE70N900I | GSM6424 | TPCA8008-H | CS5N65A3

Keywords - TJ30S06M3L MOSFET datasheet

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