All MOSFET. TJ8S06M3L Datasheet

 

TJ8S06M3L Datasheet and Replacement


   Type Designator: TJ8S06M3L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm
   Package: DPAK
 

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TJ8S06M3L Datasheet (PDF)

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TJ8S06M3L

TJ8S06M3LMOSFETs Silicon P-Channel MOS (U-MOS)TJ8S06M3LTJ8S06M3LTJ8S06M3LTJ8S06M3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 80 m (typ.) (VGS = -10 V)(2) Low leakage current: IDSS

Datasheet: TJ20S04M3L , TJ30S06M3L , TJ40S04M3L , TJ50S06M3L , TJ60S04M3L , TJ60S06M3L , TJ70A06J3 , TJ80S04M3L , IRF520 , TK100F04K3 , TK100F06K3 , TK10A50D , TK10A55D , TK10A60D , TK10S04K3L , TK10X40D , TK11A45D .

History: TPCA8101 | VSE008N03LS | BSS138LT3 | AOT3N100 | STP180N55F3 | STF10NM60N | STF10NM60ND

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