TJ8S06M3L Specs and Replacement
Type Designator: TJ8S06M3L
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm
Package: DPAK
TJ8S06M3L substitution
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TJ8S06M3L datasheet
tj8s06m3l.pdf
TJ8S06M3L MOSFETs Silicon P-Channel MOS (U-MOS ) TJ8S06M3L TJ8S06M3L TJ8S06M3L TJ8S06M3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 80 m (typ.) (VGS = -10 V) (2) Low leakage current IDSS... See More ⇒
Detailed specifications: TJ20S04M3L, TJ30S06M3L, TJ40S04M3L, TJ50S06M3L, TJ60S04M3L, TJ60S06M3L, TJ70A06J3, TJ80S04M3L, 75N75, TK100F04K3, TK100F06K3, TK10A50D, TK10A55D, TK10A60D, TK10S04K3L, TK10X40D, TK11A45D
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