TK10S04K3L Specs and Replacement

Type Designator: TK10S04K3L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: DPAK

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TK10S04K3L datasheet

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TK10S04K3L

TK10S04K3L MOSFETs Silicon N-channel MOS (U-MOS ) TK10S04K3L TK10S04K3L TK10S04K3L TK10S04K3L 1. Applications 1. Applications 1. Applications 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 22 m (typ.) (VGS = 10 V) (2) Low leakage current ... See More ⇒

Detailed specifications: TJ70A06J3, TJ80S04M3L, TJ8S06M3L, TK100F04K3, TK100F06K3, TK10A50D, TK10A55D, TK10A60D, IRFZ48N, TK10X40D, TK11A45D, TK11A50D, TK11A55D, TK11A60D, TK11A65D, TK12A10K3, TK12A45D

Keywords - TK10S04K3L MOSFET specs

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