TK10S04K3L Datasheet and Replacement
Type Designator: TK10S04K3L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: DPAK
TK10S04K3L substitution
TK10S04K3L Datasheet (PDF)
tk10s04k3l.pdf

TK10S04K3LMOSFETs Silicon N-channel MOS (U-MOS )TK10S04K3LTK10S04K3LTK10S04K3LTK10S04K3L1. Applications1. Applications1. Applications1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 22 m (typ.) (VGS = 10 V)(2) Low leakage current:
Datasheet: TJ70A06J3 , TJ80S04M3L , TJ8S06M3L , TK100F04K3 , TK100F06K3 , TK10A50D , TK10A55D , TK10A60D , RU7088R , TK10X40D , TK11A45D , TK11A50D , TK11A55D , TK11A60D , TK11A65D , TK12A10K3 , TK12A45D .
History: BRA4N60 | RFL1N10 | 2SK3529-01 | IRF7467PBF | ZXMN6A25GTA | STP16N50M2 | PT5B9BA
Keywords - TK10S04K3L MOSFET datasheet
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History: BRA4N60 | RFL1N10 | 2SK3529-01 | IRF7467PBF | ZXMN6A25GTA | STP16N50M2 | PT5B9BA



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