All MOSFET. TK11A45D Datasheet

 

TK11A45D Datasheet and Replacement


   Type Designator: TK11A45D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: TO220SIS
 

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TK11A45D Datasheet (PDF)

 ..1. Size:192K  toshiba
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TK11A45D

TK11A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK11A45D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 Low drain-source ON-resistance: RDS (ON) = 0.5 (typ.) 3.2 0.2 A High forward transfer admittance: Yfs = 3.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V) Enhancement mode: Vt

 ..2. Size:252K  inchange semiconductor
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TK11A45D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK11A45DITK11A45DFEATURESLow drain-source on-resistance:RDS(ON) = 0.5 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

 9.1. Size:195K  toshiba
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TK11A45D

TK11A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK11A60D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 9.2. Size:237K  toshiba
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TK11A45D

TK11A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK11A65WTK11A65WTK11A65WTK11A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.33 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

Datasheet: TJ8S06M3L , TK100F04K3 , TK100F06K3 , TK10A50D , TK10A55D , TK10A60D , TK10S04K3L , TK10X40D , IRF1405 , TK11A50D , TK11A55D , TK11A60D , TK11A65D , TK12A10K3 , TK12A45D , TK12A50D , TK12A53D .

History: STW60N65M5

Keywords - TK11A45D MOSFET datasheet

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