TK12A65D
MOSFET. Datasheet pdf. Equivalent
Type Designator: TK12A65D
Marking Code: K12A65D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 40
nC
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.54
Ohm
Package:
TO220SIS
TK12A65D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK12A65D
Datasheet (PDF)
..1. Size:263K toshiba
tk12a65d.pdf 
TK12A65DMOSFETs Silicon N-Channel MOS (-MOS)TK12A65DTK12A65DTK12A65DTK12A65D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.46 (typ.)(2) High forward transfer admittance: |Yfs| = 6.0 S (typ.)(3) Low leakage current: ID
8.1. Size:241K toshiba
tk12a60w.pdf
TK12A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12A60WTK12A60WTK12A60WTK12A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
8.2. Size:179K toshiba
tk12a60u.pdf
TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK12A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 (typ.) High forward transfer admittance : Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA
8.3. Size:185K toshiba
tk12a60d.pdf
TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK12A60D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: Yfs = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mod
8.4. Size:253K inchange semiconductor
tk12a60w.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK12A60W,ITK12A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.265 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.6 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regu
8.5. Size:252K inchange semiconductor
tk12a60u.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK12A60U,ITK12A60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.4Low leakage current: IDSS = 100A (max) (VDS = 600 V)Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching
8.6. Size:255K inchange semiconductor
tk12a60d.pdf
isc N-Channel MOSFET Transistor TK12A60DFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA
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