TK12E60U Specs and Replacement

Type Designator: TK12E60U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 144 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 1700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO220

TK12E60U substitution

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TK12E60U datasheet

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TK12E60U

TK12E60U MOSFETs Silicon N-Channel MOS (DTMOS ) TK12E60U TK12E60U TK12E60U TK12E60U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.36 (typ.) (2) High forward transfer admittance Yfs = 7.0 S (typ.) (3) Low leakage current IDS... See More ⇒

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TK12E60U

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TK12E60U

TK12E60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12E60W TK12E60W TK12E60W TK12E60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

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TK12E60U

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK12E60W ITK12E60W FEATURES Low drain-source on-resistance RDS(on) 0.3 . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=0.6mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

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Detailed specifications: TK12A10K3, TK12A45D, TK12A50D, TK12A53D, TK12A55D, TK12A60D, TK12A60U, TK12A65D, AO4468, TK12J55D, TK12J60U, TK12X53D, TK12X60U, TK130F06K3, TK13A25D, TK13A45D, TK13A50DA

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