TK12J55D Datasheet and Replacement. Cross Reference Search

TK12J55D Datasheet (PDF)

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TK12J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK12J55D Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VD

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TK12J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12J60WTK12J60WTK12J60WTK12J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

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TK12J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK12J60U Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.36 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V

Datasheet: TK12A45D , TK12A50D , TK12A53D , TK12A55D , TK12A60D , TK12A60U , TK12A65D , TK12E60U , BS170 , TK12J60U , TK12X53D , TK12X60U , TK130F06K3 , TK13A25D , TK13A45D , TK13A50DA , TK13A50D .