All MOSFET. 2N6796JANTXV Datasheet


2N6796JANTXV MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6796JANTXV

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.18 Ohm

Package: TO205AF

2N6796JANTXV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N6796JANTXV Datasheet (PDF)

4.1. 2n6796u irfe130.pdf Size:145K _international_rectifier


Provisional Data Sheet No. PD - 9.1666A IRFE130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] N-CHANNEL ? 100Volt, 0.18? Product Summary ?, HEXFET ? ? The leadless chip carrier (LCC) package represents Part Number BVDSS RDS(on) ID the logical next step in the continual evolution of IRFE130 100V 0.18? 8.0A surface mount te

4.2. 2n6796 2n6798 2n6800 2n6802.pdf Size:66K _omnirel


2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/557 DESCRIPTION This h

 4.3. 2n6796.pdf Size:18K _semelab


2N6796 MECHANICAL DATA Dimensions in mm (inches) TMOS FET TRANSISTOR N CHANNEL FEATURES VDSS = 100V ID = 8A ! ? RDSON = 0.18? TO

Datasheet: 2N6794JANT , 2N6794JANTX , 2N6794JANTXV , 2N6794SM , 2N6795 , 2N6795-SM , 2N6796 , 2N6796JANTX , BUZ90 , 2N6796SM , 2N6797 , 2N6797LCC4 , 2N6797-SM , 2N6798 , 2N6798JANTX , 2N6798JANTXV , 2N6798SM .

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