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TK13P25D Spec and Replacement


   Type Designator: TK13P25D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: DPAK

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TK13P25D Specs

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TK13P25D

TK13P25D MOSFETs Silicon N-Channel MOS ( -MOS ) TK13P25D TK13P25D TK13P25D TK13P25D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.19 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 250 V) (3) Enhancement mode Vth =... See More ⇒

Detailed specifications: TK13A50DA , TK13A50D , TK13A55DA , TK13A60D , TK13A65D , TK13A65U , TK13E25D , TK13J65U , IRF640N , TK14A45DA , TK14A45D , TK14A55D , TK150F04K3 , TK15A20D , TK15A50D , TK15A60D , TK15A60U .

History: INK0112AC1 | SL7N65C | 2SK125

Keywords - TK13P25D MOSFET specs

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