TK14A55D Datasheet and Replacement. Cross Reference Search

TK14A55D Datasheet (PDF)

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TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK14A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: Yfs = 6.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK14A55DITK14A55DFEATURESLow drain-source on-resistance:RDS(on) = 0.31 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

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TK14A65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK14A65W5TK14A65W5TK14A65W5TK14A65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.) by using Super Junction Struc

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TK14A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK14A65WTK14A65WTK14A65WTK14A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En