All MOSFET. TK16A55D Datasheet

 

TK16A55D MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK16A55D
   Marking Code: K16A55D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
   Package: TO220SIS

 TK16A55D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK16A55D Datasheet (PDF)

 ..1. Size:235K  toshiba
 tk16a55d.pdf

TK16A55D TK16A55D

TK16A55DMOSFETs Silicon N-Channel MOS (-MOS)TK16A55DTK16A55DTK16A55DTK16A55D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.28 (typ.)(2) High forward transfer admittance: |Yfs| = 9.0 S (typ.)(3) Low leakage current: ID

 9.1. Size:243K  toshiba
 tk16a60w5.pdf

TK16A55D TK16A55D

TK16A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16A60W5TK16A60W5TK16A60W5TK16A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.18 (typ.) by using Super Junction Struc

 9.2. Size:240K  toshiba
 tk16a60w.pdf

TK16A55D TK16A55D

TK16A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16A60WTK16A60WTK16A60WTK16A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 9.3. Size:253K  inchange semiconductor
 tk16a60w5.pdf

TK16A55D TK16A55D

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK16A60W5,ITK16A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.18 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3.0 to 4.5 V (VDS = 10 V, ID=0.79 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Re

 9.4. Size:253K  inchange semiconductor
 tk16a60w.pdf

TK16A55D TK16A55D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK16A60W, ITK16A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.16 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.79 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regul

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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