TK16A55D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK16A55D
Маркировка: K16A55D
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 550 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 16 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 45 nC
Время нарастания (tr): 50 ns
Выходная емкость (Cd): 280 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.33 Ohm
Тип корпуса: TO220SIS
TK16A55D Datasheet (PDF)
tk16a55d.pdf
TK16A55DMOSFETs Silicon N-Channel MOS (-MOS)TK16A55DTK16A55DTK16A55DTK16A55D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.28 (typ.)(2) High forward transfer admittance: |Yfs| = 9.0 S (typ.)(3) Low leakage current: ID
tk16a60w5.pdf
TK16A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK16A60W5TK16A60W5TK16A60W5TK16A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.18 (typ.) by using Super Junction Struc
tk16a60w.pdf
TK16A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK16A60WTK16A60WTK16A60WTK16A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
tk16a60w5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK16A60W5,ITK16A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.18 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 3.0 to 4.5 V (VDS = 10 V, ID=0.79 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Re
tk16a60w.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK16A60W, ITK16A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.16 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.79 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regul
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