TK19A45D Datasheet and Replacement
Type Designator: TK19A45D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO220SIS
TK19A45D substitution
TK19A45D Datasheet (PDF)
tk19a45d.pdf

TK19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK19A45D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.19 (typ.) High forward transfer admittance: Yfs = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 450 V) Enhancement-mode:
tk19a50w.pdf

TK19A50WMOSFETs Silicon N-Channel MOS (DTMOS)TK19A50WTK19A50WTK19A50WTK19A50W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.16 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En
tk19a50w.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK19A50W, ITK19A50WFEATURESLow drain-source on-resistance: RDS(ON) = 0.16 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.79 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Reg
Datasheet: TK16A45D , TK16A55D , TK16J55D , TK17A65U , TK17J65U , TK18A30D , TK18A50D , TK18A60V , 5N60 , TK19J55D , TK1P90A , TK1Q90A , TK20A25D , TK20A60U , TK20E60U , TK20J50D , TK20J60U .
History: CTLM8110-M832D | HSS2306A
Keywords - TK19A45D MOSFET datasheet
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History: CTLM8110-M832D | HSS2306A



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