TK19A45D Specs and Replacement

Type Designator: TK19A45D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: TO220SIS

TK19A45D substitution

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TK19A45D datasheet

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TK19A45D

TK19A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK19A45D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.19 (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 450 V) Enhancement-mode ... See More ⇒

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TK19A45D

TK19A50W MOSFETs Silicon N-Channel MOS (DTMOS ) TK19A50W TK19A50W TK19A50W TK19A50W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.16 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒

 9.2. Size:253K  inchange semiconductor
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TK19A45D

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK19A50W, ITK19A50W FEATURES Low drain-source on-resistance RDS(ON) = 0.16 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.79 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Reg... See More ⇒

Detailed specifications: TK16A45D, TK16A55D, TK16J55D, TK17A65U, TK17J65U, TK18A30D, TK18A50D, TK18A60V, IRLB4132, TK19J55D, TK1P90A, TK1Q90A, TK20A25D, TK20A60U, TK20E60U, TK20J50D, TK20J60U

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