BUK444-800B Datasheet. Specs and Replacement
Type Designator: BUK444-800B 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: SOT186
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BUK444-800B substitution
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BUK444-800B datasheet
buk444-800a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK444-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK444 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 1.4 1.2... See More ⇒
buk444-60h 1.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK444-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 21 A Automotive applications, Switched Ptot Total power dissipation ... See More ⇒
buk444-200a-b.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK444 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 5.3 4.7... See More ⇒
Detailed specifications: BUK436W-1000B, BUK436W-200A, BUK436W-200B, BUK436W-800A, BUK436W-800B, BUK438W-800A, BUK438W-800B, BUK444-800A, 20N60, BUK445-200A, BUK446-1000B, BUK446-800A, BUK446-800B, BUK452-100A, BUK453-100A, BUK454-800A, BUK454-800B
Keywords - BUK444-800B MOSFET specs
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