TK20E60U Datasheet. Specs and Replacement

Type Designator: TK20E60U  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 3500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220

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TK20E60U datasheet

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TK20E60U

TK20E60U MOSFETs Silicon N-Channel MOS (DTMOS ) TK20E60U TK20E60U TK20E60U TK20E60U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.165 (typ.) (2) High forward transfer admittance Yfs = 12 S (typ.) (3) Low leakage current IDS... See More ⇒

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TK20E60U

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TK20E60U

TK20E60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20E60W TK20E60W TK20E60W TK20E60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒

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TK20E60U

TK20E60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20E60W5 TK20E60W5 TK20E60W5 TK20E60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str... See More ⇒

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Detailed specifications: TK18A50D, TK18A60V, TK19A45D, TK19J55D, TK1P90A, TK1Q90A, TK20A25D, TK20A60U, IRLB4132, TK20J50D, TK20J60U, TK20P04M1, TK20S04K3L, TK20S06K3L, TK20X60U, TK25A10K3, TK25A20D

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