All MOSFET. TK20J60U Datasheet

 

TK20J60U Datasheet and Replacement


   Type Designator: TK20J60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 3500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: SC65 TO3P
 

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TK20J60U Datasheet (PDF)

 ..1. Size:192K  toshiba
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TK20J60U

TK20J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20J60U Switching Regulator Applications Unit: mm15.9 MAX. 3.2 0.2 Low drain-source ON-resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V

 7.1. Size:239K  toshiba
tk20j60w5.pdf pdf_icon

TK20J60U

TK20J60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20J60W5TK20J60W5TK20J60W5TK20J60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str

 7.2. Size:242K  toshiba
tk20j60w.pdf pdf_icon

TK20J60U

TK20J60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20J60WTK20J60WTK20J60WTK20J60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 7.3. Size:152K  toshiba
tk20j60t.pdf pdf_icon

TK20J60U

TK20J60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20J60T Switching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON resistance: RDS (ON) = 0.165 (typ.) High forward transfer admittance: Yfs = 12 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VD

Datasheet: TK19A45D , TK19J55D , TK1P90A , TK1Q90A , TK20A25D , TK20A60U , TK20E60U , TK20J50D , TK10A60D , TK20P04M1 , TK20S04K3L , TK20S06K3L , TK20X60U , TK25A10K3 , TK25A20D , TK2A65D , TK2P60D .

History: RJK4515DPK | MMIX1F210N30P3 | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | P2003EVT | SIHFDC20

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