BUK445-200A Specs and Replacement
Type Designator: BUK445-200A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: SOT186
BUK445-200A substitution
- MOSFET ⓘ Cross-Reference Search
BUK445-200A datasheet
buk445-200a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK445-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK445 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 7.6 7 A... See More ⇒
buk445-60h.pdf
Philips Semiconductors Product specification PowerMOS transistor BUK445-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 22.5 A Automotive applications, Switched Ptot Total power dissipatio... See More ⇒
Detailed specifications: BUK436W-200A , BUK436W-200B , BUK436W-800A , BUK436W-800B , BUK438W-800A , BUK438W-800B , BUK444-800A , BUK444-800B , IRF540N , BUK446-1000B , BUK446-800A , BUK446-800B , BUK452-100A , BUK453-100A , BUK454-800A , BUK454-800B , BUK455-100A .
Keywords - BUK445-200A MOSFET specs
BUK445-200A cross reference
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BUK445-200A substitution
BUK445-200A replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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