All MOSFET. TK30J25D Datasheet

 

TK30J25D Datasheet and Replacement


   Type Designator: TK30J25D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 85 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SC65 TO3P
 

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TK30J25D Datasheet (PDF)

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TK30J25D

TK30J25DMOSFETs Silicon N-Channel MOS (-MOS)TK30J25DTK30J25DTK30J25DTK30J25D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.046 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 250 V)(3) Enhancement mode: Vth

Datasheet: TK20X60U , TK25A10K3 , TK25A20D , TK2A65D , TK2P60D , TK2Q60D , TK30A06J3A , TK30A06J3 , IRF1407 , TK30S06K3L , TK35S04K3L , TK3A60DA , TK3A65DA , TK3A65D , TK3P50D , TK40A08K3 , TK40A10J1 .

History: AP2626GY | 2SK2735L | AP9620GM | AP98T06GS | UT12N10 | UF3205L-TA3-T | AOTE32136C

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