TK40J20D Specs and Replacement

Type Designator: TK40J20D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: SC65 TO3P

TK40J20D substitution

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TK40J20D datasheet

 ..1. Size:237K  toshiba
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TK40J20D

TK40J20D MOSFETs Silicon N-Channel MOS ( -MOS ) TK40J20D TK40J20D TK40J20D TK40J20D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.0374 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode Vth... See More ⇒

 9.1. Size:237K  toshiba
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TK40J20D

TK40J60U MOSFETs Silicon N-Channel MOS (DTMOS ) TK40J60U TK40J60U TK40J60U TK40J60U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.065 (typ.) (2) High forward transfer admittance Yfs = 30 S (typ.) (3) Low leakage current IDS... See More ⇒

 9.2. Size:224K  toshiba
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TK40J20D

TK40J60T www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T Switching Regulator Applications Unit mm 3.2 0.2 15.9max. Low drain-source ON resistance RDS (ON) = 0.068 (typ.) High forward transfer admittance Yfs = 25 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement-mode Vth = 3.0... See More ⇒

 9.3. Size:238K  inchange semiconductor
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TK40J20D

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK40J60U FEATURES Low drain-source on-resistance RDS(ON) = 0.065 (typ.) Easy to control Gate switching Enhancement mode V = 3.0 to 5.0V (VDS = 10 V, ID=1mA) th Low leakage current I = 100 A (max) (V = 600 V) DSS DS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable... See More ⇒

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Detailed specifications: TK3A60DA, TK3A65DA, TK3A65D, TK3P50D, TK40A08K3, TK40A10J1, TK40A10K3, TK40F08K3, SI2302, TK40J60T, TK40J60U, TK40M60U, TK40P03M1, TK40P04M1, TK40S10K3Z, TK40X10J1, TK45P03M1

Keywords - TK40J20D MOSFET specs

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