TK40J20D Datasheet and Replacement. Cross Reference Search

TK40J20D Datasheet (PDF)

..1. Size:237K toshiba
tk40j20d.pdf pdf_icon

TK40J20DMOSFETs Silicon N-Channel MOS (-MOS)TK40J20DTK40J20DTK40J20DTK40J20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.0374 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth

9.1. Size:237K toshiba
tk40j60u.pdf pdf_icon

TK40J60UMOSFETs Silicon N-Channel MOS (DTMOS)TK40J60UTK40J60UTK40J60UTK40J60U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.065 (typ.)(2) High forward transfer admittance: |Yfs| = 30 S (typ.)(3) Low leakage current: IDS

9.2. Size:224K toshiba
tk40j60t.pdf pdf_icon

TK40J60T www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T Switching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON resistance: RDS (ON) = 0.068 (typ.) High forward transfer admittance: Yfs = 25 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0

9.3. Size:238K inchange semiconductor
tk40j60u.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK40J60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.065 (typ.)Easy to control Gate switchingEnhancement mode: V = 3.0 to 5.0V (VDS = 10 V, ID=1mA)thLow leakage current: I = 100 A (max) (V = 600 V)DSS DS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .