TK40J20D. Аналоги и основные параметры

Наименование производителя: TK40J20D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 260 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 100 ns

Cossⓘ - Выходная емкость: 280 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.044 Ohm

Тип корпуса: SC65 TO3P

Аналог (замена) для TK40J20D

- подборⓘ MOSFET транзистора по параметрам

 

TK40J20D даташит

 ..1. Size:237K  toshiba
 tk40j20d.pdf pdf_icon

TK40J20D

TK40J20D MOSFETs Silicon N-Channel MOS ( -MOS ) TK40J20D TK40J20D TK40J20D TK40J20D 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.0374 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 200 V) (3) Enhancement mode Vth

 9.1. Size:237K  toshiba
 tk40j60u.pdf pdf_icon

TK40J20D

TK40J60U MOSFETs Silicon N-Channel MOS (DTMOS ) TK40J60U TK40J60U TK40J60U TK40J60U 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.065 (typ.) (2) High forward transfer admittance Yfs = 30 S (typ.) (3) Low leakage current IDS

 9.2. Size:224K  toshiba
 tk40j60t.pdf pdf_icon

TK40J20D

TK40J60T www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T Switching Regulator Applications Unit mm 3.2 0.2 15.9max. Low drain-source ON resistance RDS (ON) = 0.068 (typ.) High forward transfer admittance Yfs = 25 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement-mode Vth = 3.0

 9.3. Size:238K  inchange semiconductor
 tk40j60u.pdf pdf_icon

TK40J20D

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK40J60U FEATURES Low drain-source on-resistance RDS(ON) = 0.065 (typ.) Easy to control Gate switching Enhancement mode V = 3.0 to 5.0V (VDS = 10 V, ID=1mA) th Low leakage current I = 100 A (max) (V = 600 V) DSS DS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable

ПОКАЗАТЬ ЕЩЁ

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