Справочник MOSFET. TK40J20D

 

TK40J20D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TK40J20D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 260 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 280 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.044 Ohm
   Тип корпуса: SC65 TO3P
 

 Аналог (замена) для TK40J20D

   - подбор ⓘ MOSFET транзистора по параметрам

 

TK40J20D Datasheet (PDF)

 ..1. Size:237K  toshiba
tk40j20d.pdfpdf_icon

TK40J20D

TK40J20DMOSFETs Silicon N-Channel MOS (-MOS)TK40J20DTK40J20DTK40J20DTK40J20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.0374 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth

 9.1. Size:237K  toshiba
tk40j60u.pdfpdf_icon

TK40J20D

TK40J60UMOSFETs Silicon N-Channel MOS (DTMOS)TK40J60UTK40J60UTK40J60UTK40J60U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.065 (typ.)(2) High forward transfer admittance: |Yfs| = 30 S (typ.)(3) Low leakage current: IDS

 9.2. Size:224K  toshiba
tk40j60t.pdfpdf_icon

TK40J20D

TK40J60T www.DataSheet4U.comTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T Switching Regulator Applications Unit: mm3.20.2 15.9max. Low drain-source ON resistance: RDS (ON) = 0.068 (typ.) High forward transfer admittance: Yfs = 25 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement-mode: Vth = 3.0

 9.3. Size:238K  inchange semiconductor
tk40j60u.pdfpdf_icon

TK40J20D

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK40J60UFEATURESLow drain-source on-resistance: RDS(ON) = 0.065 (typ.)Easy to control Gate switchingEnhancement mode: V = 3.0 to 5.0V (VDS = 10 V, ID=1mA)thLow leakage current: I = 100 A (max) (V = 600 V)DSS DS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable

Другие MOSFET... TK3A60DA , TK3A65DA , TK3A65D , TK3P50D , TK40A08K3 , TK40A10J1 , TK40A10K3 , TK40F08K3 , IRFZ46N , TK40J60T , TK40J60U , TK40M60U , TK40P03M1 , TK40P04M1 , TK40S10K3Z , TK40X10J1 , TK45P03M1 .

History: ZXMN6A08E6TA | 2SK3516-01S | 2SK3357 | 2SK2961 | SGSP471 | SIHFI9Z24G | 2SK3526-01L

 

 
Back to Top

 


 
.