TK45P03M1 Specs and Replacement

Type Designator: TK45P03M1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.2 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm

Package: DPAK

TK45P03M1 substitution

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TK45P03M1 datasheet

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TK45P03M1

TK45P03M1 MOSFETs Silicon N-Channel MOS (U-MOS -H) TK45P03M1 TK45P03M1 TK45P03M1 TK45P03M1 1. Applications 1. Applications 1. Applications 1. Applications DC-DC Converters Desktop Computers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Low gate charge QSW = 8.0 nC (typ.) (3) Low drain-source on-resistance RDS(ON) = 6.5 m (typ.) (VG... See More ⇒

Detailed specifications: TK40J20D, TK40J60T, TK40J60U, TK40M60U, TK40P03M1, TK40P04M1, TK40S10K3Z, TK40X10J1, 2N60, TK4A50D, TK4A53D, TK4A55DA, TK4A55D, TK4A60DA, TK4A60DB, TK4A60D, TK4A65DA

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