All MOSFET. TK45P03M1 Datasheet

 

TK45P03M1 Datasheet and Replacement


   Type Designator: TK45P03M1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0097 Ohm
   Package: DPAK
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TK45P03M1 Datasheet (PDF)

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TK45P03M1

TK45P03M1MOSFETs Silicon N-Channel MOS (U-MOS-H)TK45P03M1TK45P03M1TK45P03M1TK45P03M11. Applications1. Applications1. Applications1. Applications DC-DC Converters Desktop Computers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Low gate charge: QSW = 8.0 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 6.5 m (typ.) (VG

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History: IRFI7536G | FDMS9620S | WMM11N80M3

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