BUK446-800B
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK446-800B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Id|ⓘ - Maximum Drain Current: 1.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4
Ohm
Package:
SOT186
BUK446-800B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK446-800B
Datasheet (PDF)
4.1. Size:51K philips
buk446-800a-b 1.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK446-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic full-pack envelope. BUK446 -800A -800BThe device is intended for use in VDS Drain-source voltage 800 800 VSwitched Mode Power Supplies ID Drain current (DC) 2.0 1.7
4.2. Size:230K inchange semiconductor
buk446-800.pdf
isc N-Channel MOSFET Transistor BUK446-800A/BDESCRIPTIONDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, And in general purpose switchingresistance applicationABSOLUTE MAXIMUM RATINGS(T =25
7.1. Size:50K philips
buk446-1000b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK446-1000B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic full-pack envelope. VDS Drain-source voltage 1000 VThe device is intended for use in ID Drain current (DC) 1.5 ASwitched Mode Power Supplies Ptot Total power dissipation
Datasheet: BUK436W-800B
, BUK438W-800A
, BUK438W-800B
, BUK444-800A
, BUK444-800B
, BUK445-200A
, BUK446-1000B
, BUK446-800A
, IRF640
, BUK452-100A
, BUK453-100A
, BUK454-800A
, BUK454-800B
, BUK455-100A
, BUK455-200A
, BUK456-1000B
, BUK456-100A
.
