BUK446-800B PDF and Equivalents Search

 

BUK446-800B Specs and Replacement

Type Designator: BUK446-800B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: SOT186

BUK446-800B substitution

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BUK446-800B datasheet

 4.1. Size:51K  philips
 buk446-800a-b 1.pdf pdf_icon

BUK446-800B

Philips Semiconductors Product Specification PowerMOS transistor BUK446-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK446 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 2.0 1.7... See More ⇒

 4.2. Size:230K  inchange semiconductor
 buk446-800.pdf pdf_icon

BUK446-800B

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 7.1. Size:50K  philips
 buk446-1000b 1.pdf pdf_icon

BUK446-800B

Philips Semiconductors Product Specification PowerMOS transistor BUK446-1000B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 1000 V The device is intended for use in ID Drain current (DC) 1.5 A Switched Mode Power Supplies Ptot Total power dissipation ... See More ⇒

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Detailed specifications: BUK436W-800B , BUK438W-800A , BUK438W-800B , BUK444-800A , BUK444-800B , BUK445-200A , BUK446-1000B , BUK446-800A , IRFP460 , BUK452-100A , BUK453-100A , BUK454-800A , BUK454-800B , BUK455-100A , BUK455-200A , BUK456-1000B , BUK456-100A .

History: IRF1010EL

Keywords - BUK446-800B MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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