BUK446-800B - аналоги, параметры транзистора - Справочник транзисторов

BUK446-800B даташит

4.1. Size:51K philips
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Philips Semiconductors Product Specification PowerMOS transistor BUK446-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK446 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 2.0 1.7

4.2. Size:230K inchange semiconductor
buk446-800.pdf pdf_icon

7.1. Size:50K philips
buk446-1000b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK446-1000B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic full-pack envelope. VDS Drain-source voltage 1000 V The device is intended for use in ID Drain current (DC) 1.5 A Switched Mode Power Supplies Ptot Total power dissipation

Другие MOSFET... BUK436W-800B , BUK438W-800A , BUK438W-800B , BUK444-800A , BUK444-800B , BUK445-200A , BUK446-1000B , BUK446-800A , IRFP460 , BUK452-100A , BUK453-100A , BUK454-800A , BUK454-800B , BUK455-100A , BUK455-200A , BUK456-1000B , BUK456-100A .