TK4P50D
MOSFET. Datasheet pdf. Equivalent
Type Designator: TK4P50D
Marking Code: K4P50D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 80
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.4
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 45
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2
Ohm
Package:
DPAK
TK4P50D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK4P50D
Datasheet (PDF)
..1. Size:210K toshiba
tk4p50d.pdf
TK4P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: Yfs = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode: Vth = 2.4 to 4
9.1. Size:203K toshiba
tk4p55da.pdf
TK4P55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P55DA Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 2.0 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: |Yfs| = 1.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.4 to 4.4
9.2. Size:208K toshiba
tk4p55d.pdf
TK4P55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK4P55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.5 (typ.) 6.6 0.2 5.34 0.13 0.58MAX High forward transfer admittance: Yfs = 2.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement-mode: Vth = 2.4 to 4.
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