BUK452-100A MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK452-100A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT78
BUK452-100A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK452-100A Datasheet (PDF)
buk452-100a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK452-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK452 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain current (DC) 11 10 A(SMPS),
buk452-100b.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK452-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK452 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain current (DC) 11 10 A(SMPS),
buk452-100.pdf
isc N-Channel MOSFET Transistor BUK452-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMU
Datasheet: BUK438W-800A , BUK438W-800B , BUK444-800A , BUK444-800B , BUK445-200A , BUK446-1000B , BUK446-800A , BUK446-800B , IRF540N , BUK453-100A , BUK454-800A , BUK454-800B , BUK455-100A , BUK455-200A , BUK456-1000B , BUK456-100A , BUK456-200A .
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