TK5A53D PDF and Equivalents Search

 

TK5A53D Specs and Replacement


   Type Designator: TK5A53D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 525 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220SIS
 

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TK5A53D datasheet

 ..1. Size:189K  toshiba
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TK5A53D

TK5A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5A53D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.2 (typ.) High forward transfer admittance Yfs = 2.8 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 525 V) Enhancement mode Vth =... See More ⇒

 ..2. Size:252K  inchange semiconductor
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TK5A53D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK5A53D ITK5A53D FEATURES Low drain-source on-resistance RDS(on) = 1.2 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

 9.1. Size:179K  toshiba
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TK5A53D

TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.3 (typ.) High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abs... See More ⇒

 9.2. Size:189K  toshiba
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TK5A53D

TK5A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK5A55D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.4 (typ.) High forward transfer admittance Yfs = 2.4 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth =... See More ⇒

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Detailed specifications: TK50J30D , TK50J60U , TK50P03M1 , TK50P04M1 , TK50X15J1 , TK55A10J1 , TK5A45DA , TK5A50D , 60N06 , TK5A55D , TK5A60D , TK5A65DA , TK5A65D , TK5P50D , TK5P53D , TK60A08J1 , TK60J25D .

Keywords - TK5A53D MOSFET specs

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