Справочник MOSFET. TK5A53D

 

TK5A53D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK5A53D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 525 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO220SIS

 Аналог (замена) для TK5A53D

 

 

TK5A53D Datasheet (PDF)

 ..1. Size:189K  toshiba
 tk5a53d.pdf

TK5A53D TK5A53D

TK5A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A53D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement mode: Vth =

 ..2. Size:252K  inchange semiconductor
 tk5a53d.pdf

TK5A53D TK5A53D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A53DITK5A53DFEATURESLow drain-source on-resistance:RDS(on) = 1.2 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:179K  toshiba
 tk5a50d.pdf

TK5A53D TK5A53D

TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: Yfs = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abs

 9.2. Size:189K  toshiba
 tk5a55d.pdf

TK5A53D TK5A53D

TK5A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK5A55D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: |Yfs| = 2.4 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth =

 9.3. Size:252K  inchange semiconductor
 tk5a50d.pdf

TK5A53D TK5A53D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A50DITK5A50DFEATURESLow drain-source on-resistance:RDS(on) = 1.3 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

 9.4. Size:252K  inchange semiconductor
 tk5a55d.pdf

TK5A53D TK5A53D

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK5A55DITK5A55DFEATURESLow drain-source on-resistance:RDS(ON) = 1.4 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

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