BUK453-100A
MOSFET. Datasheet pdf. Equivalent
Type Designator: BUK453-100A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16
Ohm
Package:
TO220AB
BUK453-100A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BUK453-100A
Datasheet (PDF)
0.1. Size:57K philips
buk453-100a-b 2.pdf 
Philips Semiconductors Product Specification PowerMOS transistor BUK453-100A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK453 -100A -100BThe device is intended for use in VDS Drain-source voltage 100 100 VSwitched Mode Power Supplies ID Drain current (DC) 14 13 A(SMPS),
4.1. Size:228K inchange semiconductor
buk453-100.pdf
isc N-Channel MOSFET Transistor BUK453-100A/BDESCRIPTIONDrain Source Voltage-: V =100V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMU
7.1. Size:54K philips
buk453-60a-b.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK453-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK453 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain current (DC) 22 20 A(SMPS), motor
7.2. Size:54K philips
buk453-60a-b 1.pdf
Philips Semiconductors Product Specification PowerMOS transistor BUK453-60A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK453 -60A -60BThe device is intended for use in VDS Drain-source voltage 60 60 VSwitched Mode Power Supplies ID Drain current (DC) 22 20 A(SMPS), motor
7.3. Size:229K inchange semiconductor
buk453-60.pdf
isc N-Channel MOSFET Transistor BUK453-60A/BDESCRIPTIONDrain Source Voltage-: V =60V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMUM
Datasheet: BUK438W-800B
, BUK444-800A
, BUK444-800B
, BUK445-200A
, BUK446-1000B
, BUK446-800A
, BUK446-800B
, BUK452-100A
, IRFZ44
, BUK454-800A
, BUK454-800B
, BUK455-100A
, BUK455-200A
, BUK456-1000B
, BUK456-100A
, BUK456-200A
, BUK456-200B
.
