TK6A60D MOSFET Datasheet: N-Ch, 600V, 6A. Full specification with pinout and replacement list

TK6A60D Specs and Replacement

   Type Designator: TK6A60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO220SIS

TK6A60D substitution

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TK6A60D datasheet

..1. Size:188K toshiba
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TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK6A60D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu... See More ⇒

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TK6A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6A60W TK6A60W TK6A60W TK6A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.68 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance... See More ⇒

8.2. Size:253K inchange semiconductor
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INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK6A60W ITK6A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.68 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.31mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulat... See More ⇒

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TK6A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6A65W TK6A65W TK6A65W TK6A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.85 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement... See More ⇒