TK6A60D. Аналоги и основные параметры

Наименование производителя: TK6A60D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 40 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 20 ns

Cossⓘ - Выходная емкость: 100 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.25 Ohm

Тип корпуса: TO220SIS

Аналог (замена) для TK6A60D

- подборⓘ MOSFET транзистора по параметрам

 

TK6A60D даташит

 ..1. Size:188K  toshiba
 tk6a60d.pdf pdf_icon

TK6A60D

TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK6A60D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Yfs = 3.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu

 8.1. Size:237K  toshiba
 tk6a60w.pdf pdf_icon

TK6A60D

TK6A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6A60W TK6A60W TK6A60W TK6A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.68 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhance

 8.2. Size:253K  inchange semiconductor
 tk6a60w.pdf pdf_icon

TK6A60D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK6A60W ITK6A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.68 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.31mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulat

 9.1. Size:376K  toshiba
 tk6a65w.pdf pdf_icon

TK6A60D

TK6A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK6A65W TK6A65W TK6A65W TK6A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.85 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhancement

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... TK60P03M1, TK60S06K3L, TK65L60V, TK65S04K3L, TK6A45DA, TK6A50D, TK6A53D, TK6A55DA, IRFB4110, TK6A65D, TK6P53D, TK70A06J1, TK70J04J3, TK70J20D, TK70X04K3, TK70X06K3, TK75A06K3