TK6A65D
MOSFET. Datasheet pdf. Equivalent
Type Designator: TK6A65D
Marking Code: K6A65D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 20
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.11
Ohm
Package:
TO220SIS
TK6A65D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK6A65D
Datasheet (PDF)
..1. Size:199K toshiba
tk6a65d.pdf 
TK6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK6A65D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.95 (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 650 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
..2. Size:253K inchange semiconductor
tk6a65d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A65DITK6A65DFEATURESLow drain-source on-resistance:RDS(ON) = 0.95 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
8.1. Size:376K toshiba
tk6a65w.pdf
TK6A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK6A65WTK6A65WTK6A65WTK6A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.85 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhancement
8.2. Size:253K inchange semiconductor
tk6a65w.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A65WITK6A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.85 (typ.)Enhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.18mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(
9.1. Size:188K toshiba
tk6a60d.pdf
TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK6A60D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu
9.2. Size:237K toshiba
tk6a60w.pdf
TK6A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK6A60WTK6A60WTK6A60WTK6A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.68 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhance
9.3. Size:253K inchange semiconductor
tk6a60w.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK6A60WITK6A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.68 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.31mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulat
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