All MOSFET. TK70A06J1 Datasheet

 

TK70A06J1 Datasheet and Replacement


   Type Designator: TK70A06J1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
   Package: TO220SIS
 

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TK70A06J1 Datasheet (PDF)

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TK70A06J1

TK70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS) TK70A06J1 Switching Regulator Application Unit: mm High-Speed switching Small gate charge: Qg = 87nC (typ.) Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.) High forward transfer admittance: |Yfs| = 80 S (typ.) Low leakage current: IDSS = 10 A (max) (V

Datasheet: TK65S04K3L , TK6A45DA , TK6A50D , TK6A53D , TK6A55DA , TK6A60D , TK6A65D , TK6P53D , IRF3710 , TK70J04J3 , TK70J20D , TK70X04K3 , TK70X06K3 , TK75A06K3 , TK7A45DA , TK7A50D , TK7A55D .

History: SI4904DY | FDD86250_F085

Keywords - TK70A06J1 MOSFET datasheet

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