All MOSFET. TK70J20D Datasheet

 

TK70J20D MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK70J20D
   Marking Code: K70J20D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 410 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 160 nC
   trⓘ - Rise Time: 155 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SC65 TO3P

 TK70J20D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK70J20D Datasheet (PDF)

 ..1. Size:226K  toshiba
 tk70j20d.pdf

TK70J20D TK70J20D

TK70J20DMOSFETs Silicon N-Channel MOS (-MOS)TK70J20DTK70J20DTK70J20DTK70J20D1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.02 (typ.)(2) Low leakage current: IDSS = 10 A (max) (VDS = 200 V)(3) Enhancement mode: Vth =

 9.1. Size:225K  toshiba
 tk70j06k3.pdf

TK70J20D TK70J20D

TK70J06K3MOSFETs Silicon N-channel MOS (U-MOS)TK70J06K3TK70J06K3TK70J06K3TK70J06K31. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 4.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS

 9.2. Size:239K  toshiba
 tk70j04k3z.pdf

TK70J20D TK70J20D

TK70J04K3ZMOSFETs Silicon N-channel MOS (U-MOS)TK70J04K3ZTK70J04K3ZTK70J04K3ZTK70J04K3Z1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators DC-DC Converters Motor Drivers2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 3.2 m (typ.) (VGS = 10 V)(2) Low leakage current:

 9.3. Size:195K  toshiba
 tk70j04j3.pdf

TK70J20D TK70J20D

TK70J04J3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) TK70J04J3 Motor Drive Application Unit: mm Low drain-source ON resistance: RDS (ON) = 3.0 m (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 40 V) Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ra

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BRF5N65 | PPMT30V3 | CST08N50F | ZVN2110A

 

 
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