TK7A50D Specs and Replacement

Type Designator: TK7A50D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.22 Ohm

Package: TO220SIS

TK7A50D substitution

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TK7A50D datasheet

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TK7A50D

TK7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK7A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Yfs = 2.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abs... See More ⇒

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TK7A50D

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK7A50D ITK7A50D FEATURES Low drain-source on-resistance RDS(ON) = 1.0 (typ.) Enhancement mode Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

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TK7A50D

TK7A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK7A55D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 1.0 (typ.) High forward transfer admittance Yfs = 3.6 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement-mode Vt... See More ⇒

Detailed specifications: TK6P53D, TK70A06J1, TK70J04J3, TK70J20D, TK70X04K3, TK70X06K3, TK75A06K3, TK7A45DA, P55NF06, TK7A55D, TK7A65D, TK7P50D, TK80A08K3, TK80E06K3A, TK80F08K3, TK80S04K3L, TK80S06K3L

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.