TK7A55D MOSFET. Datasheet pdf. Equivalent
Type Designator: TK7A55D
Marking Code: K7A55D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: TO220SIS
TK7A55D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK7A55D Datasheet (PDF)
tk7a55d.pdf
TK7A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK7A55D Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 3.6 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement-mode: Vt
tk7a50d.pdf
TK7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK7A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 2.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Abs
tk7a50d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK7A50DITK7A50DFEATURESLow drain-source on-resistance:RDS(ON) = 1.0 (typ.)Enhancement mode:Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
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