All MOSFET. TK80F08K3 Datasheet

 

TK80F08K3 Datasheet and Replacement


   Type Designator: TK80F08K3
   Marking Code: K80F08K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 175 nC
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: TO220SM
 

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TK80F08K3 Datasheet (PDF)

 ..1. Size:214K  toshiba
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TK80F08K3

TK80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK80F08K3 Swiching Regulator Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.4 m (typ.) 10.0 0.3 Low leakage current: IDSS = 10 A (max) (VDS = 75 V) 0.4 0.19.5 0.2 Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C)

Datasheet: TK75A06K3 , TK7A45DA , TK7A50D , TK7A55D , TK7A65D , TK7P50D , TK80A08K3 , TK80E06K3A , 2N7000 , TK80S04K3L , TK80S06K3L , TK80X04K3 , TK8A10K3 , TK8A25DA , TK8A45DA , TK8A45D , TK8A50DA .

History: HP8KA1

Keywords - TK80F08K3 MOSFET datasheet

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