TK80F08K3 Specs and Replacement

Type Designator: TK80F08K3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 1140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: TO220SM

TK80F08K3 substitution

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TK80F08K3 datasheet

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TK80F08K3

TK80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK80F08K3 Swiching Regulator Unit mm Low drain-source ON-resistance RDS (ON) = 3.4 m (typ.) 10.0 0.3 Low leakage current IDSS = 10 A (max) (VDS = 75 V) 0.4 0.1 9.5 0.2 Enhancement-model Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) ... See More ⇒

Detailed specifications: TK75A06K3, TK7A45DA, TK7A50D, TK7A55D, TK7A65D, TK7P50D, TK80A08K3, TK80E06K3A, AON7408, TK80S04K3L, TK80S06K3L, TK80X04K3, TK8A10K3, TK8A25DA, TK8A45DA, TK8A45D, TK8A50DA

Keywords - TK80F08K3 MOSFET specs

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