TK8A50D
MOSFET. Datasheet pdf. Equivalent
Type Designator: TK8A50D
Marking Code: K8A50D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 16
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85
Ohm
Package:
TO220SIS
TK8A50D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK8A50D
Datasheet (PDF)
..1. Size:180K toshiba
tk8a50d.pdf 
TK8A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.7 (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolu
..2. Size:253K inchange semiconductor
tk8a50d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A50DITK8A50DFEATURESLow drain-source on-resistance:RDS(ON) = 0.7 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
0.1. Size:209K toshiba
tk8a50da.pdf
TK8A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A50DA Switching Regulator Applications Unit: mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.76 (typ.) High forward transfer admittance: Yfs = 4.1 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement-mode:
9.1. Size:201K toshiba
tk8a55da.pdf
TK8A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK8A55DA Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth =
9.2. Size:258K inchange semiconductor
tk8a55da.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK8A55DAITK8A55DAFEATURESLow drain-source on-resistance:RDS(ON) = 0.9 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING
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