All MOSFET. TPC8045-H Datasheet

 

TPC8045-H Datasheet and Replacement


   Type Designator: TPC8045-H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6.4 nS
   Cossⓘ - Output Capacitance: 950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: SOP8
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TPC8045-H Datasheet (PDF)

 ..1. Size:208K  toshiba
tpc8045-h.pdf pdf_icon

TPC8045-H

TPC8045-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8045-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 23 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.7 m (typ.) H

 8.1. Size:200K  toshiba
tpc8042.pdf pdf_icon

TPC8045-H

TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 2.7 m (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low leakage curr

 8.2. Size:208K  toshiba
tpc8047-h.pdf pdf_icon

TPC8045-H

TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 11 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.1 m (typ.) H

 8.3. Size:208K  toshiba
tpc8046-h.pdf pdf_icon

TPC8045-H

TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 15 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 m (typ.) H

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: GSM3030 | IRF6612

Keywords - TPC8045-H MOSFET datasheet

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