TPC8045-H. Аналоги и основные параметры
Наименование производителя: TPC8045-H
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 6.4 ns
Cossⓘ - Выходная емкость: 950 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
Тип корпуса: SOP8
Аналог (замена) для TPC8045-H
- подборⓘ MOSFET транзистора по параметрам
TPC8045-H даташит
tpc8045-h.pdf
TPC8045-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8045-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 23 nC (typ.) Low drain-source ON-resistance RDS (ON) = 2.7 m (typ.) H
tpc8042.pdf
TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit mm Portable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance RDS (ON) = 2.7 m (typ.) High forward transfer admittance Yfs = 42 S (typ.) Low leakage curr
tpc8047-h.pdf
TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 11 nC (typ.) Low drain-source ON-resistance RDS (ON) = 5.1 m (typ.) H
tpc8046-h.pdf
TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit mm DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge QSW = 15 nC (typ.) Low drain-source ON-resistance RDS (ON) = 3.8 m (typ.) H
Другие IGBT... TPC6111, TPC6113, TPC6130, TPC8027, TPC8028, TPC8029, TPC8041, TPC8042, 10N65, TPC8046-H, TPC8047-H, TPC8048-H, TPC8049-H, TPC8050-H, TPC8051-H, TPC8052-H, TPC8053-H
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Список транзисторов
Обновления
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