All MOSFET. TPC8076 Datasheet

 

TPC8076 Datasheet and Replacement


   Type Designator: TPC8076
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 33 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.7 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: SOP8
 

 TPC8076 substitution

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TPC8076 Datasheet (PDF)

 ..1. Size:235K  toshiba
 tpc8076.pdf pdf_icon

TPC8076

TPC8076MOSFETs Silicon N-Channel MOS (U-MOS)TPC8076TPC8076TPC8076TPC80761. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.9 m (typ

 8.1. Size:235K  toshiba
 tpc8078.pdf pdf_icon

TPC8076

TPC8078MOSFETs Silicon N-Channel MOS (U-MOS)TPC8078TPC8078TPC8078TPC80781. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ

 8.2. Size:223K  toshiba
 tpc8074.pdf pdf_icon

TPC8076

TPC8074MOSFETs Silicon N-Channel MOS (U-MOS)TPC8074TPC8074TPC8074TPC80741. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.1 m

 8.3. Size:234K  toshiba
 tpc8075.pdf pdf_icon

TPC8076

TPC8075MOSFETs Silicon N-Channel MOS (U-MOS)TPC8075TPC8075TPC8075TPC80751. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.1 m (typ

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Datasheet: TPC8063-H , TPC8064-H , TPC8065-H , TPC8066-H , TPC8067-H , TPC8073 , TPC8074 , TPC8075 , AON7403 , TPC8078 , TPC8080 , TPC8081 , TPC8082 , TPC8084 , TPC8085 , TPC8086 , TPC8087 .

History: SI8410DB | IPB80N06S2L-11 | AP30T10GK

Keywords - TPC8076 MOSFET datasheet

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