TPC8076. Аналоги и основные параметры
Наименование производителя: TPC8076
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 33 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 2.7 ns
Cossⓘ - Выходная емкость: 430 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0049 Ohm
Тип корпуса: SOP8
Аналог (замена) для TPC8076
- подборⓘ MOSFET транзистора по параметрам
TPC8076 даташит
tpc8076.pdf
TPC8076 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8076 TPC8076 TPC8076 TPC8076 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 3.9 m (typ
tpc8078.pdf
TPC8078 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8078 TPC8078 TPC8078 TPC8078 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 1.9 m (typ
tpc8074.pdf
TPC8074 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8074 TPC8074 TPC8074 TPC8074 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 5.1 m
tpc8075.pdf
TPC8075 MOSFETs Silicon N-Channel MOS (U-MOS ) TPC8075 TPC8075 TPC8075 TPC8075 1. Applications 1. Applications 1. Applications 1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments 2. Features 2. Features 2. Features 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance RDS(ON) = 2.1 m (typ
Другие IGBT... TPC8063-H, TPC8064-H, TPC8065-H, TPC8066-H, TPC8067-H, TPC8073, TPC8074, TPC8075, IRF9640, TPC8078, TPC8080, TPC8081, TPC8082, TPC8084, TPC8085, TPC8086, TPC8087
History: AOSD21313C
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